Defect-deformation mechanism of spontaneous nucleation of an ensemble of pores in solids and its experimental verification

The defect-deformation (DD) mechanism of spontaneous formation of ensembles of seed pores during etching of semiconductors and metals is developed. The mechanism is based on the concept of generation and DD self-organisation of interstices and vacancies during etching. For p-Si, good agreement between theoretical and experimental results is obtained. In particular, a quasi-hexagonal order in the arrangement of micropores on the surface is revealed, which was predicted by the DD model, and a control of the properties of the ensemble by means of external forces is demonstrated.