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Kvantovaya Elektronika, 2002, Volume 32, Number 5, Pages 455–459 (Mi qe2218)  

Control of laser radiation parameters

Spectrum of an anti-Stokes Raman ion laser in Λ-schemes with various level parameters

S. A. Babin, S. I. Kablukov, S. M. Kobtsev, V. V. Potapov, D. V. Churkin

Institute of Automation and Electrometry, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract: The dependence of the Raman-laser output power in a standing-wave mode on the pump frequency located near the resonance with ionic levels is studied. The emission spectra in two Λ-schemes of Ar II with different lifetimes of the final levels are compared. In the scheme with a long-lived final state, a sharp peak with an amplitude exceeding the amplitude of a broad contour by a factor of 1.5 — 2 is observed at the exact resonance, whereas no spectral features are observed near the resonance in the scheme with a short-lived final level. The effect is analysed within the framework of a model taking into account the Coulomb scattering of ions. It is shown that the peak forms due to a difference in the broadening of the Bennett structures in the population distribution of the operating levels over velocities. In the second Λ-scheme, the contribution of the final level is small in amplitude, and a sharp peak in the spectrum disappears in accordance with the predictions of the model.
Received: 20.02.2002
English version:
Quantum Electronics, 2002, Volume 32, Issue 5, Pages 455–459
DOI: https://doi.org/10.1070/QE2002v032n05ABEH002218
Bibliographic databases:
Document Type: Article
PACS: 42.55.Lt, 42.65.Dr
Language: Russian


Citation: S. A. Babin, S. I. Kablukov, S. M. Kobtsev, V. V. Potapov, D. V. Churkin, “Spectrum of an anti-Stokes Raman ion laser in Λ-schemes with various level parameters”, Kvantovaya Elektronika, 32:5 (2002), 455–459 [Quantum Electron., 32:5 (2002), 455–459]
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    Квантовая электроника Quantum Electronics
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