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This article is cited in 4 scientific papers (total in 4 papers)
Lasers
Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers
V. D. Kurnosov, K. V. Kurnosov, R. V. Chernov Open Joint-Stock Company M. F. Stel'makh Polyus Research Institute, Moscow
Abstract:
The characteristics of single-frequency lasers are investigated experimentally and theoretically. It is shown that the model of spectral hole burning with a varying interband relaxation time adequately describes the spectral and modulation characteristics of the laser (taking into account the transport of carriers). The time of carrier capture in a quantum well is 4 ps and the time of their escape is 80 ps.
Received: 20.02.2002
Citation:
V. D. Kurnosov, K. V. Kurnosov, R. V. Chernov, “Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers”, Kvantovaya Elektronika, 32:4 (2002), 303–307 [Quantum Electron., 32:4 (2002), 303–307]
Linking options:
https://www.mathnet.ru/eng/qe2188 https://www.mathnet.ru/eng/qe/v32/i4/p303
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