V. D. Kurnosov, K. V. Kurnosov, R. V. Chernov, “Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers”, Kvantovaya Elektronika, 32:4 (2002), 303–307 [Quantum Electron., 32:4 (2002), 303

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Kvantovaya Elektronika, 2002, Volume 32, Number 4, Pages 303–307 (Mi qe2188)

This article is cited in 4 scientific papers (total in 4 papers)

Lasers

Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers

V. D. Kurnosov, K. V. Kurnosov, R. V. Chernov

Open Joint-Stock Company M. F. Stel'makh Polyus Research Institute, Moscow

Full-text PDF (230 kB) Citations (4)

Abstract: The characteristics of single-frequency lasers are investigated experimentally and theoretically. It is shown that the model of spectral hole burning with a varying interband relaxation time adequately describes the spectral and modulation characteristics of the laser (taking into account the transport of carriers). The time of carrier capture in a quantum well is 4 ps and the time of their escape is 80 ps.

Received: 20.02.2002

English version:
Quantum Electronics, 2002, Volume 32, Issue 4, Pages 303–307
DOI: https://doi.org/10.1070/QE2002v032n04ABEH002188

Bibliographic databases:

Document Type: Article

PACS: 42.55.Px, 42.60.Lh

Language: Russian

Citation: V. D. Kurnosov, K. V. Kurnosov, R. V. Chernov, “Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers”, Kvantovaya Elektronika, 32:4 (2002), 303–307 [Quantum Electron., 32:4 (2002), 303–307]

Linking options:

https://www.mathnet.ru/eng/qe2188

https://www.mathnet.ru/eng/qe/v32/i4/p303

Erratum

Errata to the article: Study of characteristics of single-frequency GaAs/AlGaAs semiconductor lasers
V. D. Kurnosov, K. V. Kurnosov, R. V. Chernov
Kvantovaya Elektronika, 2002, 32:6, 564

This publication is cited in the following 4 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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