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Kvantovaya Elektronika, 2002, Volume 32, Number 4, Pages 289–293 (Mi qe2185)  

This article is cited in 1 scientific paper (total in 1 paper)

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Deionisation of the afterglow plasma due to accelerated ambipolar diffusion

E. L. Latush, O. O. Prutsakov, G. D. Chebotarev

Rostov State University, Department of Physics
Full-text PDF (144 kB) Citations (1)
Abstract: The accelerated ambipolar particle diffusion is simulated in the afterglow of discharges in He – Cu and Ne –Cu mixtures. The calculations showed that a heating field E ≈ 0.3 – 1.3 V cm-1 imposed on the afterglow discharge at a buffer gas pressure of 8 – 10 Torr and a tube diameter of 4 – 10 mm reduced the electron density by a factor of 102 – 104 for ~100 μs. The effect was shown to be most pronounced in helium. According to the calculations, the application of accelerated ambipolar diffusion during the interpulse period will increase the pulse repetition rate of copper vapour lasers with low-diameter tubes (4 – 6 mm) and low buffer-gas pressures (6 – 8 Torr) by 20% – 50%. The production of excessive prepulse density of the metastable states of copper can be prevented by interrupting the plasma heating 3 – 6 μs before the onset of the next excitation pulse.
Received: 08.11.2001
English version:
Quantum Electronics, 2002, Volume 32, Issue 4, Pages 289–293
DOI: https://doi.org/10.1070/QE2002v032n04ABEH002185
Bibliographic databases:
Document Type: Article
PACS: 52.80.-s
Language: Russian


Citation: E. L. Latush, O. O. Prutsakov, G. D. Chebotarev, “Deionisation of the afterglow plasma due to accelerated ambipolar diffusion”, Kvantovaya Elektronika, 32:4 (2002), 289–293 [Quantum Electron., 32:4 (2002), 289–293]
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  • https://www.mathnet.ru/eng/qe/v32/i4/p289
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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