Effect of amplified luminescence on the lasing threshold of long-wavelength injection lasers

By solving radiation-transfer equations, we studied the effect of amplified luminescence on the lasing threshold of long-wavelength injection InGaAsP/InP lasers with bulk and quantum-well active layers emitting in the range from 1.3 to 1.55 μm. The amplified luminescence trapped in the resonator of a stripe laser can result in an increase in the threshold current density by a factor of two and more. It is shown that the effect of amplified luminescence on the temperature dependence of the threshold current is most pronounced in longer-wavelength lasers and, all other factors being the same, in lasers with a quantum-well active layer.