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Kvantovaya Elektronika, 2002, Volume 32, Number 3, Pages 216–218 (Mi qe2164)  

Special edition devoted to the 40th Anniversary of Polyus Research & Development Institute

Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes

P. V. Bulaev, O. I. Govorkov, I. D. Zalevskii, V. G. Krigel, A. A. Marmalyuk, D. B. Nikitin, A. A. Padalitsa, A. V. Petrovskii

Open Joint-Stock Company M. F. Stel'makh, Polyus Research Institute, Moscow
Abstract: Laser heterostructures with an active layer consisted of two strained InGaAs quantum wells are fabricated by the MOCVD epitaxy method. Single-mode laser diodes with a 3 – 4-μm wide stripe contact are made of the heterostructures and their spectral characteristics are studied. It is found that the spectrum of the diodes consists of two groups of longitudinal modes, which cause the spectral broadening. The power distribution between these groups of modes depends on time, the pump current and the temperature of the active region. It is assumed that such a behavior of the diode spectra is explained by the asymmetry of the composition of the diode active region, which arises due to the segregation of In because of the complicated mechanism of its penetrating in the solid solution during the epitaxial growth. This assumption was confirmed by the study of the active region using a modified Auger spectroscopy method.
Received: 30.01.2002
English version:
Quantum Electronics, 2002, Volume 32, Issue 3, Pages 216–218
DOI: https://doi.org/10.1070/QE2002v032n03ABEH002164
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Jf
Language: Russian


Citation: P. V. Bulaev, O. I. Govorkov, I. D. Zalevskii, V. G. Krigel, A. A. Marmalyuk, D. B. Nikitin, A. A. Padalitsa, A. V. Petrovskii, “Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes”, Kvantovaya Elektronika, 32:3 (2002), 216–218 [Quantum Electron., 32:3 (2002), 216–218]
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