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Kvantovaya Elektronika, 2002, Volume 32, Number 2, Pages 95–100 (Mi qe2136)  

This article is cited in 14 scientific papers (total in 14 papers)

Lasers, active media

Development of a self-initiated volume discharge in nonchain HF lasers

V. V. Apollonova, A. A. Belevtsevb, S. Yu. Kazantseva, A. V. Saifulina, K. N. Firsova

a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b Institute of Extremal States Thermophysics, Scientific Association for High Temperatures, Russian Academy of Sciences, Moscow
Abstract: The dynamics of a self-initiated volume discharge (SIVD) is studied in SF6 – C2H6 mixtures, which are used as the working media in nonchain HF lasers, employing discharge gaps of different geometry. The results of investigation are consistent with the previously made assumption that there exist mechanisms which limit the current density of a volume discharge in SF6 and SF6-based mixtures. SIVD simulations were performed taking into account the SF6 dissociation by electron impact, the dissociative electron – ion recombination, the electron detachment from negative ions by electron impact, and the ion – ion recombination. The simulation results are in qualitative agreement with experimental results. The electron – ion recombination and the electron detachment from negative ions were found to cancel each other, to within the accuracy of estimates of the rate constants. The dissociation of SF6 (and other components of the mixture) is most likely responsible for the limitation of the current density in the diffusive discharge channel and for the increase in discharge volume with increasing input energy.
Received: 22.10.2001
English version:
Quantum Electronics, 2002, Volume 32, Issue 2, Pages 95–100
DOI: https://doi.org/10.1070/QE2002v032n02ABEH002136
Bibliographic databases:
Document Type: Article
PACS: 42.55.Lt, 52.80.Hc
Language: Russian


Citation: V. V. Apollonov, A. A. Belevtsev, S. Yu. Kazantsev, A. V. Saifulin, K. N. Firsov, “Development of a self-initiated volume discharge in nonchain HF lasers”, Kvantovaya Elektronika, 32:2 (2002), 95–100 [Quantum Electron., 32:2 (2002), 95–100]
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  • https://www.mathnet.ru/eng/qe2136
  • https://www.mathnet.ru/eng/qe/v32/i2/p95
  • This publication is cited in the following 14 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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