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Kvantovaya Elektronika, 1994, Volume 21, Number 10, Pages 991–993 (Mi qe213)  

This article is cited in 6 scientific papers (total in 6 papers)

Laser applications and other topics in quantum electronics

Slanted superimposed diffraction gratings formed by an electron beam in amorphous arsenic sulfide films

S. A. Sergeev, A. A. Simashkevich, S. D. Shutov

Institute of Applied Physics Academy of Sciences of Moldova, Kishinev
Abstract: Superimposed phase diffraction gratings were formed by an electron beam in amorphous arsenic sulfide (As2S3) films. The number of superimposed gratings was N = 2–10 and the angle of slant was π/N. The electron-beam-stimulated modulation of the refractive index n1 = 10-3–10-2 of the superimposed gratings was studied as a function of the number of these gratings. The main factor which limited the number of mutually independent superimposed gratings was the limit of linearity of the response of the recording medium at the nodal regions where the total radiation dose was maximal.
Received: 28.01.1994
English version:
Quantum Electronics, 1994, Volume 24, Issue 10, Pages 924–926
DOI: https://doi.org/10.1070/QE1994v024n10ABEH000213
Bibliographic databases:
Document Type: Article
PACS: 42.79.Dj, 81.40.Tv
Language: Russian


Citation: S. A. Sergeev, A. A. Simashkevich, S. D. Shutov, “Slanted superimposed diffraction gratings formed by an electron beam in amorphous arsenic sulfide films”, Kvantovaya Elektronika, 21:10 (1994), 991–993 [Quantum Electron., 24:10 (1994), 924–926]
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  • https://www.mathnet.ru/eng/qe/v21/i10/p991
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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