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Kvantovaya Elektronika, 2001, Volume 31, Number 9, Pages 799–800 (Mi qe2047)  

This article is cited in 3 scientific papers (total in 3 papers)

Active media. Lasers

Luminescence of Nd-doped epitaxial single-crystal garnet films grown on Gd3Ga5O12 substrates

V. V. Randoshkina, M. I. Belovolovb, N. V. Vasil'evaa, K. A. Zykov-Myzinb, A. M. Saletskiic, N. N. Sysoevc, A. N. Churkinc

a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
c Lomonosov Moscow State University, Faculty of Physics
Full-text PDF (161 kB) Citations (3)
Abstract: Epitaxial films with the atomic concentration of neodymium varied in the range from 1 to 15 % were grown on Gd3Ga5O12 substrates with the orientation (111) by the method of liquid-phase epitaxy from a PbO – B2O3 overcooled melt solution. The absorption spectra of the films are recorded and their luminescence spectra and luminescence lifetimes of active ions are measured upon diode laser pumping. The concentration dependence of the luminescence lifetime of Nd3+ ions is determined.
Received: 23.04.2001
English version:
Quantum Electronics, 2001, Volume 31, Issue 9, Pages 799–800
DOI: https://doi.org/10.1070/QE2001v031n09ABEH002047
Bibliographic databases:
Document Type: Article
PACS: 32.50.Jr, 32.50.+d, 78.66.Nk
Language: Russian


Citation: V. V. Randoshkin, M. I. Belovolov, N. V. Vasil'eva, K. A. Zykov-Myzin, A. M. Saletskii, N. N. Sysoev, A. N. Churkin, “Luminescence of Nd-doped epitaxial single-crystal garnet films grown on Gd3Ga5O12 substrates”, Kvantovaya Elektronika, 31:9 (2001), 799–800 [Quantum Electron., 31:9 (2001), 799–800]
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  • https://www.mathnet.ru/eng/qe/v31/i9/p799
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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