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Kvantovaya Elektronika, 2001, Volume 31, Number 7, Pages 629–633 (Mi qe2017)  

This article is cited in 19 scientific papers (total in 19 papers)

Lasers. Active media

Ion – ion recombination in SF6 and in SF6 – C2H6 mixtures for high values of E/N

V. V. Apollonova, A. A. Belevtsevb, S. Yu. Kazantseva, A. V. Saifulina, K. N. Firsova

a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b Institute of Extremal States Thermophysics, Scientific Association for High Temperatures, Russian Academy of Sciences, Moscow
Abstract: Ion–ion recombination coefficients in a decaying SF6 plasma and in SF6 – C2H6 mixtures are measured in the pressure range 15 – 90 Torr for reduced field strengths 100 – 250 Td. The charge composition is analysed and dominating ion – ion recombination channels in such plasmas are determined. Relations for estimating the potential drop at the electrodes are obtained for decaying plasma in strongly electronegative gases. The results of measurements are extrapolated for estimating the ion – ion recombination coefficient in SF6 for nearly critical field strengths. It is concluded that the ion – ion recombination should be taken into account in calculations of the discharge characteristics in non-chain reaction HF lasers.
Received: 12.03.2001
English version:
Quantum Electronics, 2001, Volume 31, Issue 7, Pages 629–633
DOI: https://doi.org/10.1070/QE2001v031n07ABEH002017
Bibliographic databases:
Document Type: Article
PACS: 42.55.Ks, 52.27.Jt
Language: Russian


Citation: V. V. Apollonov, A. A. Belevtsev, S. Yu. Kazantsev, A. V. Saifulin, K. N. Firsov, “Ion – ion recombination in SF6 and in SF6 – C2H6 mixtures for high values of E/N”, Kvantovaya Elektronika, 31:7 (2001), 629–633 [Quantum Electron., 31:7 (2001), 629–633]
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  • This publication is cited in the following 19 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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