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Kvantovaya Elektronika, 2001, Volume 31, Number 7, Pages 565–566 (Mi qe2004)  
This article is cited in 3 scientific papers (total in 3 papers)

Letters

Structural transitions in GaAs during irradiation by a 100-fs laser pulse

S. I. Kudryashov, V. I. Emel'yanov

Lomonosov Moscow State University, Faculty of Physics
Full-text PDF (159 kB) Citations (3)
Abstract: It is shown experimentally for the first time that the pumping of a GaAs sample by a 100-fs laser pulse causes plasma-induced bandgap collapse and 'cold' melting of the material during the pulse.
Received: 20.03.2001
English version:
Quantum Electronics, 2001, Volume 31, Issue 7, Pages 565–566
DOI: https://doi.org/10.1070/QE2001v031n07ABEH002004
Bibliographic databases:
Document Type: Article
PACS: 78.40.Fy, 78.47.+p
Language: Russian


Citation: S. I. Kudryashov, V. I. Emel'yanov, “Structural transitions in GaAs during irradiation by a 100-fs laser pulse”, Kvantovaya Elektronika, 31:7 (2001), 565–566 [Quantum Electron., 31:7 (2001), 565–566]
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  • https://www.mathnet.ru/eng/qe2004
  • https://www.mathnet.ru/eng/qe/v31/i7/p565
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Квантовая электроника Quantum Electronics
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