N. V. Gultikov, K. Yu. Telegin, A. Yu. Andreev, L. I. Shestak, V. A. Panarin, M. Yu. Starynin, A. A. Marmalyuk, M. A. Ladugin, “High-power laser diode arrays based on (Al)GaAs/AlGaAs/GaAs and GaAsP/GaInP/GaAs quantum-well heterostructures”, Kvantovaya Elektronika, 53:8 (2023), 667–671 [Bull. Lebedev Physics Institute, 50:suppl. 12 (2023), S1391

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Kvantovaya Elektronika, 2023, Volume 53, Number 8, Pages 667–671 (Mi qe18322)

This article is cited in 1 scientific paper (total in 1 paper)

Laser applications and system components

High-power laser diode arrays based on (Al)GaAs/AlGaAs/GaAs and GaAsP/GaInP/GaAs quantum-well heterostructures

N. V. Gultikov^a, K. Yu. Telegin^a, A. Yu. Andreev^a, L. I. Shestak^b, V. A. Panarin^b, M. Yu. Starynin^b, A. A. Marmalyuk^a, M. A. Ladugin^a

^a LLC Sigm Plus, 117342, Moscow, Russia
^b Research and Production Enterprise Inject Ltd, 410033, Saratov, Russia

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Abstract: We report theoretical and experimental results of comparison of high-power laser diode arrays made of (Al)GaAs/AlGaAs and GaAsP/GaInP heterostructures for the spectral range from 800 to 810 nm. The best results are demonstrated for arrays based on GaAsP/GaInP heterostructures. The maximum values of the output optical power of 1-cm-long laser diode arrays in the quasi-cw pump regime reach 370 – 380 W. The possible reason for the difference in the output powers of the arrays based on the material systems in question is discussed and methods for further increasing the radiation power are presented.

Keywords: high-power laser diode arrays, aluminum-free heterostructure.

Funding agency	Grant number
Ministry of Science and Higher Education of the Russian Federation	МД-3928.2022.1.2
This work was supported by the RF President’s Grants Council (Support to Young Scientists and Doctors of Science Program MD-3928.2022.1.2).

Received: 08.05.2023
Revised: 22.07.2023

English version:
Bull. Lebedev Physics Institute, 2023, Volume 50, Issue suppl. 12, Pages S1391–S1397
DOI: https://doi.org/10.3103/S1068335623602224

Document Type: Article

Language: Russian

Citation: N. V. Gultikov, K. Yu. Telegin, A. Yu. Andreev, L. I. Shestak, V. A. Panarin, M. Yu. Starynin, A. A. Marmalyuk, M. A. Ladugin, “High-power laser diode arrays based on (Al)GaAs/AlGaAs/GaAs and GaAsP/GaInP/GaAs quantum-well heterostructures”, Kvantovaya Elektronika, 53:8 (2023), 667–671 [Bull. Lebedev Physics Institute, 50:suppl. 12 (2023), S1391–S1397]

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https://www.mathnet.ru/eng/qe18322

https://www.mathnet.ru/eng/qe/v53/i8/p667

This publication is cited in the following 1 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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Abstract page:	59
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References:	11
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