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Kvantovaya Elektronika, 2022, Volume 52, Number 11, Pages 1012–1017 (Mi qe18196)  

Selection of papers presented at the International Workshop on Fibre Lasers (Novosibirsk, 15-19 August 2022) (Compiled and edited by S.L. Semjonov and S.A. Babin)

Formation of laser-induced periodic structures on thin films of transition metal nitrides and semiconductors

K. A. Bronnikova, S. A. Gladkikha, K. A. Okotruba, V. P. Korolkova, A. A. Kuchmizhakbc, A. V. Dostovalova

a Institute of Automation and Electrometry, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
c Pacific Quantum Center, Far Eastern Federal University
References:
Abstract: We report the results of the formation of laser-induced periodic surface structures (LIPSS’s) on 25–400-nm-thick TiN, CrN, and Ge3N4 films using femtosecond laser pulses in the visible and IR ranges. The effect of laser irradiation parameters (wavelength, pulse energy, and scanning speed) on the morphology and chemical composition of the formed structures is studied. The formation of ordered thermochemical LIPSS’s with a nitride/oxide complex composition in the case of TiN and CrN films and ablative LIPSS’s with a short period in the case of a Ge3N4 film is found.
Keywords: laser-induced periodic surface structures, transition metal nitrides, semiconductor nitrides.
Funding agency Grant number
Russian Science Foundation 21-72-20162
Received: 16.09.2022
Revised: 27.10.2022
Accepted: 27.10.2022
English version:
Bull. Lebedev Physics Institute, 2023, Volume 50, Issue suppl. 3, Pages S329–S335
DOI: https://doi.org/10.3103/S1068335623150046
Document Type: Article
Language: Russian


Citation: K. A. Bronnikov, S. A. Gladkikh, K. A. Okotrub, V. P. Korolkov, A. A. Kuchmizhak, A. V. Dostovalov, “Formation of laser-induced periodic structures on thin films of transition metal nitrides and semiconductors”, Kvantovaya Elektronika, 52:11 (2022), 1012–1017 [Bull. Lebedev Physics Institute, 50:suppl. 3 (2023), S329–S335]
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