Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses

We report the development and investigation of laser diodes based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region, optimised for generating high-power subnanosecond optical pulses in the gain-switching regime. Optimisation of the asymmetric heterostructure design makes it possible to obtain the parameter d/Γ=4.2 μm for a 45-nm-thick GaAs bulk active region and an optical confinement factor of Γ = 1.08%. For the developed laser diodes with a wide emitting aperture (100 μm) in the gain-switching regime, a peak output optical power of 22 W is demonstrated at a pulse duration at the half-amplitude level of less than 110 ps.