Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots

Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky – Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134 – 153 cm^–1) optical losses is demonstrated. The saturated modal gain is estimated to be 45 cm^–1 per quantum dot layer, which exceeds the values typical for conventional quantumdot lasers by several times.