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This article is cited in 1 scientific paper (total in 1 paper)
Interaction of laser radiation with matter. Laser plasma
On the mechanism of local melting on the surface of monocrystalline semiconductors under intense light irradiation
Ya. V. Fattakhov, M. F. Galyautdinov, T. N. L'vova, I. B. Khaibullin Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences
Abstract:
The dynamics of anisotropic local melting of monocrystalline semiconductors irradiated by intense pulses of coherent and incoherent light is studied. The time dependences of the size and the density (per unit area) of local melting region obtained in situ are interpreted using a model of a short-lived metastable state characterised by superheating in the solid phase. Experiments are discussed required to provide the final answer to the problem of the mechanism of the effect revealed.
Received: 16.12.1999
Citation:
Ya. V. Fattakhov, M. F. Galyautdinov, T. N. L'vova, I. B. Khaibullin, “On the mechanism of local melting on the surface of monocrystalline semiconductors under intense light irradiation”, Kvantovaya Elektronika, 30:7 (2000), 597–600 [Quantum Electron., 30:7 (2000), 597–600]
Linking options:
https://www.mathnet.ru/eng/qe1773 https://www.mathnet.ru/eng/qe/v30/i7/p597
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Abstract page: | 117 | Full-text PDF : | 85 | First page: | 2 |
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