On the mechanism of local melting on the surface of monocrystalline semiconductors under intense light irradiation

The dynamics of anisotropic local melting of monocrystalline semiconductors irradiated by intense pulses of coherent and incoherent light is studied. The time dependences of the size and the density (per unit area) of local melting region obtained in situ are interpreted using a model of a short-lived metastable state characterised by superheating in the solid phase. Experiments are discussed required to provide the final answer to the problem of the mechanism of the effect revealed.