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Kvantovaya Elektronika, 2021, Volume 51, Number 5, Pages 419–422 (Mi qe17437)  

This article is cited in 2 scientific papers (total in 2 papers)

Lasers

Stable Q-switched mode-locking of an in-band pumped Ho : Y2O3 ceramic laser at 2117 nm

Yajie Shena, Enhao Lib, Jun Wanga, Dingyuan Tanga, Deyuan Shena

a Jiangsu Key Laboratory of Advanced Laser Materials and Devices, Jiangsu Normal University, China
b Jiangsu Collaborative Innovation Center of Advanced Laser Technology and Emerging Industry, Xuzhou, China
References:
Abstract: We have demonstrated stable Q-switched mode-locked operation of an in-band pumped Ho : Y2O3 ceramic laser at 2117 nm by using an InGaAs/GaAs-based saturable absorber. An average output power of 330 mW is reached for 2.7 W of absorbed pump power with stable mode-locked pulses having a 98.9-MHz repetition rate and 100% modulation depth embedded inside Q-switched envelopes of ~1.7-μs duration. The duration of the mode-locked pulses is estimated to be less than 1.5 ns.
Keywords: Q-switched mode-locking, mid-IR range, laser ceramic, Ho : Y2O3; pulsed laser.
Funding agency Grant number
National Natural Science Foundation of China U1730119
62035007
Jiangsu Provincial Innovation Graduate Program KYCX20_2348
Received: 30.01.2021
English version:
Quantum Electronics, 2021, Volume 51, Issue 5, Pages 419–422
DOI: https://doi.org/10.1070/QEL17525
Bibliographic databases:
Document Type: Article
Language: Russian


Citation: Yajie Shen, Enhao Li, Jun Wang, Dingyuan Tang, Deyuan Shen, “Stable Q-switched mode-locking of an in-band pumped Ho : Y2O3 ceramic laser at 2117 nm”, Kvantovaya Elektronika, 51:5 (2021), 419–422 [Quantum Electron., 51:5 (2021), 419–422]
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  • https://www.mathnet.ru/eng/qe17437
  • https://www.mathnet.ru/eng/qe/v51/i5/p419
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    Abstract page:110
    Full-text PDF :14
    References:19
    First page:5
     
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