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This article is cited in 5 scientific papers (total in 5 papers)
Lasers
Nanosecond semiconductor disk laser emitting at 496.5 nm
M. R. Butaevab, V. I. Kozlovskyab, Ya. K. Skasyrskya a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b National Engineering Physics Institute "MEPhI", Moscow
Abstract:
An optically pumped semiconductor disk laser based on a heterostructure containing ten CdS/ZnSe coupled quantum wells with type-II band offsets is studied. The structure was grown by metalorganic vapour phase epitaxy (MOVPE) on a GaAs substrate. The peak power of the semiconductor disk laser achieved at room temperature under longitudinal pumping by a repetitively pulsed N2 laser was 0.75 W at a wavelength of 496.5 nm, a pulse duration of 3 ns, and a pulse repetition rate of 100 Hz. The slope efficiency of the disk laser was 2.7%. The total divergence angle at a cavity length of 1.1 mm varied from 5 mrad near the lasing threshold to 15 mrad at the maximum pump power.
Keywords:
MOVPE, semiconductor disk laser, CdS/ZnSe heterostructure, quantum wells, optical pumping.
Received: 22.06.2020
Citation:
M. R. Butaev, V. I. Kozlovsky, Ya. K. Skasyrsky, “Nanosecond semiconductor disk laser emitting at 496.5 nm”, Kvantovaya Elektronika, 50:10 (2020), 895–899 [Quantum Electron., 50:10 (2020), 895–899]
Linking options:
https://www.mathnet.ru/eng/qe17338 https://www.mathnet.ru/eng/qe/v50/i10/p895
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Abstract page: | 172 | Full-text PDF : | 40 | References: | 22 | First page: | 11 |
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