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This article is cited in 2 scientific papers (total in 2 papers)
Lasers, active media
Numerical simulation of the divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic multilayer AlGaInAs/InP waveguide
V. D. Kurnosov, K. V. Kurnosov Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
Abstract:
The divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic (multilayer) waveguide are numerically simulated. The reasons for the choice of the given heterostructure design are explained, and the consequences of choosing other layer structures are considered. It is shown how to choose the active waveguide thickness, the active region position on the waveguide, and the multilayer waveguide grating period.
Keywords:
radiation divergence, optical confinement factor, multilayer waveguide, semiconductor laser.
Received: 25.02.2020 Revised: 19.04.2020
Citation:
V. D. Kurnosov, K. V. Kurnosov, “Numerical simulation of the divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic multilayer AlGaInAs/InP waveguide”, Kvantovaya Elektronika, 50:9 (2020), 816–821 [Quantum Electron., 50:9 (2020), 816–821]
Linking options:
https://www.mathnet.ru/eng/qe17316 https://www.mathnet.ru/eng/qe/v50/i9/p816
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