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Kvantovaya Elektronika, 2020, Volume 50, Number 8, Pages 788–792 (Mi qe17297)  

This article is cited in 1 scientific paper (total in 1 paper)

Nonlinear optical phenomena

Influence of growth temperature of KTiOAsO4 single crystals on their physicochemical parameters and formation of domain structures

L. I. Isaenkoa, A. P. Eliseeva, D. B. Kolkerabc, V. N. Vedenyapina, S. A. Zhurkovd, E. Yu. Erushinb, N. Yu. Kostyukovaabc, A. A. Boykoabc, V. Ya. Shure, A. R. Akhmatkhanove, M. A. Chuvakovae

a Novosibirsk State University
b Novosibirsk State Technical University
c Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk
d Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
e Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
References:
Abstract: A potassium titanyl arsenate (KTiOAsO4, KTA) crystal 50 × 80 × 60 mm in size has been grown by upgraded Czochralski method from flux (TGGS) with a decrease in temperature from 900 to 770 °C during pulling. It is shown that the spectroscopic properties of the parts of KTA crystals grown at 900 and 770 °C are close, whereas the electrical conductivity of the low-temperature (770 °C) KTA part turned out to be an order of magnitude lower than that of the high-temperature part. Visualisation of the domain structure by second-harmonic generation microscopy revealed a more efficient domain intergrowth (throughout the sample) in the low-temperature KTA, which is important for forming a regular domain structure (RDS) in a KTA-based nonlinear optical element. It is established that the quantum efficiency of parametric generation of light in the RDS formed in low-temperature KTA is several times higher than in the case of high-temperature KTA. The results obtained are important for optimising RDS parameters.
Keywords: potassium arsenate titanyl crystal, absorption spectra, regular domain structures, parametric generation of light.
Funding agency Grant number
Russian Science Foundation 19-12-00085
Received: 09.02.2020
Revised: 14.05.2020
English version:
Quantum Electronics, 2020, Volume 50, Issue 8, Pages 788–792
DOI: https://doi.org/10.1070/QEL17265
Bibliographic databases:
Document Type: Article
Language: Russian


Citation: L. I. Isaenko, A. P. Eliseev, D. B. Kolker, V. N. Vedenyapin, S. A. Zhurkov, E. Yu. Erushin, N. Yu. Kostyukova, A. A. Boyko, V. Ya. Shur, A. R. Akhmatkhanov, M. A. Chuvakova, “Influence of growth temperature of KTiOAsO4 single crystals on their physicochemical parameters and formation of domain structures”, Kvantovaya Elektronika, 50:8 (2020), 788–792 [Quantum Electron., 50:8 (2020), 788–792]
Linking options:
  • https://www.mathnet.ru/eng/qe17297
  • https://www.mathnet.ru/eng/qe/v50/i8/p788
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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