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This article is cited in 1 scientific paper (total in 1 paper)
Papers devoted to the 80th jubilee of Vladilen Letokhov
Structural phase transition and manifestation of eddy currents in IR reflection spectra of PbSnTe semiconductor films
V. A. Yakovleva, A. V. Muratovb, I. V. Kucherenkob, V. S. Vinogradovb, N. N. Novikovaa, G. Karczewskic, S. Schreyeckd a Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow
b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
c Institute of Physics, Polish Academy of Sciences, Poland
d Physikalisches Institute, Universität Würzburg, Germany
Abstract:
Infrared reflection spectra of thin (~60 nm) Pb1-xSnxTe (x = 0.25, 0.53, 0.59) films grown by molecular beam epitaxy on GaAs/CdTe hybrid substrates have been measured at frequencies from 20 to 5500 cm-1 and temperatures from 5 to 300 K. The spectra have been used to determine temperature-dependent transverse phonon and plasmon frequencies in the films, which has made it possible to identify a structural phase transition at TC ≈ 50 K. The plasma frequency of the films has been shown to increase with decreasing band gap on cooling from 300 to 77 K. The increase in plasma frequency is mainly attributable to the increase in carrier concentration and a transition of the carriers from vortex states on the film surface to the valence band.
Keywords:
reflection spectra, dispersion analysis, transverse phonons, phase transition, plasma frequency, eddy currents.
Received: 03.02.2020
Citation:
V. A. Yakovlev, A. V. Muratov, I. V. Kucherenko, V. S. Vinogradov, N. N. Novikova, G. Karczewski, S. Schreyeck, “Structural phase transition and manifestation of eddy currents in IR reflection spectra of PbSnTe semiconductor films”, Kvantovaya Elektronika, 50:3 (2020), 263–266 [Quantum Electron., 50:3 (2020), 263–266]
Linking options:
https://www.mathnet.ru/eng/qe17217 https://www.mathnet.ru/eng/qe/v50/i3/p263
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