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Acousto- and electro-optic modulation of light
Modelling an electro-optical modulator based on a vertical p – n junction in a silicon-on-insulator structure
A. V. Tsarevab, R. M. Tazieva a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Abstract:
We report the results of numerical simulation of a Mach–Zehnder electro-optical modulator using beam splitters based on multimode interference in a silicon-on-insulator structure. The control is provided due to the depletion effect in the vertical p – n junction, which can be fabricated using the self-alignment technology. An optimal modulator design is proposed, which impedance is matched with an external 50-Ω load, for which, with a reverse bias of –5 V and an active length of 1.7 mm, the optical frequency bandwidth of ~50 GHz can be achieved. A special doping profile of the p – n junction of the modulator is presented, which provides an optical frequency bandwidth of 30 GHz with a reverse bias of –3 V and a modulator length of 2.5 mm. Such modulators can be used in integrated optics, optical communications and radio photonics devices.
Keywords:
electro-optical modulator, silicon-on-insulator, p – n junction, numerical simulation, integrated optics, radio photonics.
Received: 22.03.2019 Revised: 24.04.2019
Citation:
A. V. Tsarev, R. M. Taziev, “Modelling an electro-optical modulator based on a vertical p – n junction in a silicon-on-insulator structure”, Kvantovaya Elektronika, 49:11 (2019), 1036–1044 [Quantum Electron., 49:11 (2019), 1036–1044]
Linking options:
https://www.mathnet.ru/eng/qe17140 https://www.mathnet.ru/eng/qe/v49/i11/p1036
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Abstract page: | 206 | Full-text PDF : | 155 | References: | 32 | First page: | 17 |
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