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This article is cited in 1 scientific paper (total in 1 paper)
Lasers
Superluminescent diodes based on asymmetric double-quantum-well heterostructures
E. V. Andreevaa, S. N. Il'chenkoa, M. A. Laduginb, A. A. Marmalyukb, K. M. Pankratova, V. R. Shidlovskiĭa, S. D. Yakubovichc a "Opton" LLC, Moscow
b "Sigm Plyus" Ltd., Moscow
c MIREA — Russian Technological University, Moscow
Abstract:
The power and spectral characteristics of near-IR superluminescent diodes (SLDs) based on asymmetric double-quantumwell GaAs/InGaAs heterostructures are studied experimentally. It is shown that, varying the active layer composition and the spatialsingle-mode active channel length of these SLDs, it is possible to widely change the achievable output optical power and the spectral width of the symmetric bell-shaped spectrum. The studied SLDs have a lower coherence function pedestal, a weaker dependence of the spectral width on the injection current, and a higher polarisation degree than the widely spread SLDs based on single-quantum-well heterostructures with the same spectral widths.
Keywords:
superluminescent diode, asymmetric double-quantumwell heterostructure.
Received: 05.06.2019
Citation:
E. V. Andreeva, S. N. Il'chenko, M. A. Ladugin, A. A. Marmalyuk, K. M. Pankratov, V. R. Shidlovskiĭ, S. D. Yakubovich, “Superluminescent diodes based on asymmetric double-quantum-well heterostructures”, Kvantovaya Elektronika, 49:10 (2019), 931–935 [Quantum Electron., 49:10 (2019), 931–935]
Linking options:
https://www.mathnet.ru/eng/qe17134 https://www.mathnet.ru/eng/qe/v49/i10/p931
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