Active region of a functionally integrated laser–modulator

A method for the functional integration of injection lasers and modulators of generated light in a single heterostructure with spatially displaced quantum wells in the conduction and valence bands, formed by the second-type heterojunctions, is proposed. The structures and energy band diagrams of the active regions of functionally integrated lasers–modulators with amplitude and frequency modulation are considered. A physical–topological model and a technique for numerical simulation of lasers–modulators is proposed. It is shown that the maximum modulation frequencies for the proposed heterostructures, in contrast to the same frequencies implemented under pump current modulation, are not limited by the duration of transients in the laser power supply circuit and the carrier lifetime in the laser active region but are determined by the photon lifetime in the cavity.