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This article is cited in 5 scientific papers (total in 5 papers)
Special issue 'Physics of ultracold atoms and their applications'
Temperature drift contribution to frequency instability of silicon Fabry–Perot cavities
N. O. Zhadnova, G. A. Vishnyakovaa, K. S. Kudeyarova, D. S. Kryuchkova, K. Yu. Khabarovaab, N. N. Kolachevskyabc a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b All-Russian Scientific Research Institute of Physical-Technical and Radiotechnical Measurements, Mendeleevo, Moscow region
c Russian Quantum Center, Moscow, Skolkovo
Abstract:
A contribution of a temperature drift near the silicon thermal expansion coefficient zero point to the fractional frequency instability of a silicon cavity is analysed. The thermal expansion coefficient of silicon is measured by an optical method near the zero point T0 = 123 K. It is shown that the frequency instability due to cavity temperature drifts observed in an experiment does not exceed a thermal noise limit at averaging intervals of up to 20 s.
Keywords:
ultrastable cavities, single-crystal silicon, optical method for measuring thermal expansion coefficient, temperature drift, fractional frequency instability.
Received: 12.03.2019 Revised: 27.03.2019
Citation:
N. O. Zhadnov, G. A. Vishnyakova, K. S. Kudeyarov, D. S. Kryuchkov, K. Yu. Khabarova, N. N. Kolachevsky, “Temperature drift contribution to frequency instability of silicon Fabry–Perot cavities”, Kvantovaya Elektronika, 49:5 (2019), 424–428 [Quantum Electron., 49:5 (2019), 424–428]
Linking options:
https://www.mathnet.ru/eng/qe17046 https://www.mathnet.ru/eng/qe/v49/i5/p424
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Abstract page: | 205 | Full-text PDF : | 46 | References: | 26 | First page: | 12 |
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