Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 2018, Volume 48, Number 3, Pages 215–221 (Mi qe16779)  

Lasers and amplifiers

Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping

P. A. Bokhana, K. S. Zhuravleva, D. È. Zakrevskiiab, T. V. Malina, I. V. Osinnykha, N. V. Fateevac

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
c Novosibirsk State University
References:
Abstract: Spectral, temporal, and polarisation characteristics of luminescence of heavily doped AlxGa1-xN films on a sapphire substrate are studied under pulsed pumping at the wavelength λ = 266 m. Spectra of spontaneous emission related to donor – acceptor transitions are inhomogeneously broadened with the FWHM of above 0.5 eV and cover the entire visible range. Spectra of radiation emitted from an edge of investigated structure comprise several narrow-band equidistant components, each of them being split to TE and TM modes with mutually orthogonal polarisations. This is related to plane waves propagating inside a plane waveguide along a zigzag path in the conditions of total internal reflection from waveguide surfaces. The optical gains measured for Al0.5Ga0.5N/AlN at λ ≈ 510 nm, Al0.74Ga0.26N/AlN at λ ≈ 468 nm, and AlN/Al0.6Ga0.4N/AlN/Al2O3 at λ ≈ 480 nm were, respectively, ~70, 20, and 44 cm-1. The luminescence quantum efficiencies measured for Al0.74Ga0.26N, Al0.65Ga0.35N, and Al0.5Ga0.5N films are, respectively, 0.79, 0.49, and 0.14; the transition cross sections calculated at emission band centres are ~10-18 cm2.
Keywords: luminescence, optical pumping, spontaneous emission, gain.
Received: 09.10.2017
Revised: 29.12.2017
English version:
Quantum Electronics, 2018, Volume 48, Issue 3, Pages 215–221
DOI: https://doi.org/10.1070/QEL16529
Bibliographic databases:
Document Type: Article
Language: Russian


Citation: P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping”, Kvantovaya Elektronika, 48:3 (2018), 215–221 [Quantum Electron., 48:3 (2018), 215–221]
Linking options:
  • https://www.mathnet.ru/eng/qe16779
  • https://www.mathnet.ru/eng/qe/v48/i3/p215
  • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:257
    Full-text PDF :81
    References:34
    First page:17
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024