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Kvantovaya Elektronika, 2018, Volume 48, Number 1, Pages 22–28 (Mi qe16751)  

This article is cited in 8 scientific papers (total in 8 papers)

Nonlinear optical phenomena

Amplification and generation of surface plasmon polaritons in a semiconductor film–dielectric structure

A. S. Abramova, I. O. Zolotovskiiab, S. G. Moiseevacd, D. I. Sementsova

a Ulyanovsk State University
b Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences
c Ul'yanovsk Branch of Institute of Radioengineering and Electronics, Russian Academy of Sciences
d Ulyanovsk State Technical University
Full-text PDF (777 kB) Citations (8)
References:
Abstract: The peculiarities of propagation and amplification of surface waves of plasmon polariton type in a planar semiconductor film–dielectric structure are considered for the THz frequency region, with allowance for dissipation in a semiconductor. Two spectral regions are found, where the group velocity of surface plasmon polaritons is negative. It is shown that in these regions the structure can be considered as an amplifying waveguide with distributed feedback and a high gain with respect to the reflected and transmitted signals. The possibility of generation of electromagnetic radiation in such structures is established.
Keywords: surface plasmon polariton, negative group velocity, current pumping, phase-matching condition, amplification and generation of THz radiation, distributed feedback laser.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 14.Z50.31.0015
3.3889.2017/ПЧ
3.5698.2017/П220
Russian Foundation for Basic Research 17-02-01382
Russian Science Foundation 17-72-10135
Received: 26.07.2017
Revised: 09.10.2017
English version:
Quantum Electronics, 2018, Volume 48, Issue 1, Pages 22–28
DOI: https://doi.org/10.1070/QEL16487
Bibliographic databases:
Document Type: Article
Language: Russian


Citation: A. S. Abramov, I. O. Zolotovskii, S. G. Moiseev, D. I. Sementsov, “Amplification and generation of surface plasmon polaritons in a semiconductor film–dielectric structure”, Kvantovaya Elektronika, 48:1 (2018), 22–28 [Quantum Electron., 48:1 (2018), 22–28]
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  • https://www.mathnet.ru/eng/qe16751
  • https://www.mathnet.ru/eng/qe/v48/i1/p22
  • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    Abstract page:397
    Full-text PDF :112
    References:46
    First page:29
     
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