A. I. Chumakov, M. P. Belova, L. N. Kessarinsky, A. Ya. Borisov, K. A. Ivanov, I. N. Tsymbalov, R. V. Volkov, A. B. Savel'ev, L. I. Galanina, N. P. Chirskaya, L. S. Novikov, “Ionisation response in semiconductor structures exposed to the X-ray radiation of a femtosecond laser-plasma source”, Kvantovaya Elektronika, 47:6 (2017), 528–532 [Quantum Electron., 47:6 (2017), 528

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Kvantovaya Elektronika, 2017, Volume 47, Number 6, Pages 528–532 (Mi qe16628)

This article is cited in 1 scientific paper (total in 1 paper)

Interaction of laser radiation with matter. Laser plasma

Ionisation response in semiconductor structures exposed to the X-ray radiation of a femtosecond laser-plasma source

A. I. Chumakov^ab, M. P. Belova^b, L. N. Kessarinsky^a, A. Ya. Borisov^a, K. A. Ivanov^cde, I. N. Tsymbalov^ce, R. V. Volkov^ce, A. B. Savel'ev^ce, L. I. Galanina^f, N. P. Chirskaya^f, L. S. Novikov^f

^a JSC 'ENGOs SPELS', Moscow
^b Moscow Engineering Physics Institute (National Nuclear Research University)
^c International Laser Center of Moscow State University
^d P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^e Faculty of Physics, Lomonosov Moscow State University
^f Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics

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Abstract: The possibilities of applying a femtosecond laser-plasma source of X-ray radiation for modelling the effect of single nuclear particles based on the principle of equivalent charge generation are analysed. The parameters of femtosecond X-ray radiation for the experimental modelling of individual radiation effects are validated. The experimental setup forming the X-ray radiation is described. The results of comparative ionisation response modelling in simple electronic devices using the FLUKA and FEANT codes are presented.

Keywords: X-ray radiation, femtosecond laser plasma, single event effects, semiconductor devices.

Funding agency	Grant number
Russian Foundation for Basic Research	14-29-09244 офи_м 15-32-20417 мол-а-вед
Ministry of Education and Science of the Russian Federation

Received: 17.03.2017
Revised: 11.05.2017

English version:
Quantum Electronics, 2017, Volume 47, Issue 6, Pages 528–532
DOI: https://doi.org/10.1070/QEL16364

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Document Type: Article

Language: Russian

Citation: A. I. Chumakov, M. P. Belova, L. N. Kessarinsky, A. Ya. Borisov, K. A. Ivanov, I. N. Tsymbalov, R. V. Volkov, A. B. Savel'ev, L. I. Galanina, N. P. Chirskaya, L. S. Novikov, “Ionisation response in semiconductor structures exposed to the X-ray radiation of a femtosecond laser-plasma source”, Kvantovaya Elektronika, 47:6 (2017), 528–532 [Quantum Electron., 47:6 (2017), 528–532]

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https://www.mathnet.ru/eng/qe16628

https://www.mathnet.ru/eng/qe/v47/i6/p528

This publication is cited in the following 1 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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Full-text PDF :	61
References:	41
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