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Kvantovaya Elektronika, 2016, Volume 46, Number 3, Pages 218–222 (Mi qe16340)  

This article is cited in 9 scientific papers (total in 9 papers)

Control of laser radiation parameters

Highly efficient, versatile, self-Q-switched, high-repetition-rate microchip laser generating Ince–Gaussian modes for optical trapping

Jun Dong, Yu He, Xiao Zhou, Shengchuang Bai

Department of Electronics Engineering, School of Information Science and Engineering, Xiamen, China
References:
Abstract: Lasers operating in the Ince-Gaussian (IG) mode have potential applications for optical manipulation of microparticles and formation of optical vortices, as well as for optical trapping and optical tweezers. Versatile, self-Q-switched, high-peak-power, high-repetition-rate Cr, Nd:YAG microchip lasers operating in the IG mode are implemented under tilted, tightly focused laser-diode pumping. An average output power of over 2 W is obtained at an absorbed pump power of 6.4 W. The highest optical-to-optical efficiency of 33.2% is achieved at an absorbed pump power of 3.9 W. Laser pulses with a pulse energy of 7.5 μJ, pulse width of 3.5 ns and peak power of over 2 kW are obtained. A repetition rate up to 335 kHz is reached at an absorbed pump power of 5.8 W. Highly efficient, versatile, IG-mode lasers with a high repetition rate and a high peak power ensure a better flexibility in particle manipulation and optical trapping.
Keywords: Ince–Guassian modes; Cr, Nd:YAG microchip lasers; laser-diode pumping, self-Q switching.
Received: 02.04.2015
Revised: 13.11.2015
English version:
Quantum Electronics, 2016, Volume 46, Issue 3, Pages 218–222
DOI: https://doi.org/10.1070/QEL15826
Bibliographic databases:
Document Type: Article
Language: Russian


Citation: Jun Dong, Yu He, Xiao Zhou, Shengchuang Bai, “Highly efficient, versatile, self-Q-switched, high-repetition-rate microchip laser generating Ince–Gaussian modes for optical trapping”, Kvantovaya Elektronika, 46:3 (2016), 218–222 [Quantum Electron., 46:3 (2016), 218–222]
Linking options:
  • https://www.mathnet.ru/eng/qe16340
  • https://www.mathnet.ru/eng/qe/v46/i3/p218
  • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    Abstract page:160
    Full-text PDF :44
    References:24
    First page:30
     
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