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This article is cited in 1 scientific paper (total in 1 paper)
Control of laser radiation parameters
Passively Q-switched, intracavity frequency-doubled YVO4/Nd:YVO4/KTP green laser with a GaAs saturable absorber
Shang Gao School of Science, Shandong Jiaotong University, Jinan, China
Abstract:
A diode-pumped, passively Q-switched, intracavity frequency-doubled YVO4/Nd:YVO4/KTP green laser is realised using a GaAs saturable absorber. Two pieces of GaAs wafers are employed in the experiment. In using a 400-μm-thick GaAs wafer and an incident pump power of 10.5 W, the maximum output power of the passively Q-switched green laser is 362 mW at a pulse repetition rate of 84 kHz and a pulse duration of 2.5 ns. When use is made of a 700-mm-thick GaAs wafer, the minimum pulse duration is 1.5 ns at a repetition rate of 67 kHz, pulse energy of 4.18 μJ and peak power of 2.8 kW.
Keywords:
green laser, passive Q-switching, saturable absorber.
Received: 07.04.2015 Revised: 21.07.2015
Citation:
Shang Gao, “Passively Q-switched, intracavity frequency-doubled YVO4/Nd:YVO4/KTP green laser with a GaAs saturable absorber”, Kvantovaya Elektronika, 45:11 (2015), 1000–1002 [Quantum Electron., 45:11 (2015), 1000–1002]
Linking options:
https://www.mathnet.ru/eng/qe16275 https://www.mathnet.ru/eng/qe/v45/i11/p1000
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Abstract page: | 210 | Full-text PDF : | 118 | References: | 35 | First page: | 5 |
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