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Kvantovaya Elektronika, 2015, Volume 45, Number 9, Pages 823–827 (Mi qe16243)  

This article is cited in 35 scientific papers (total in 35 papers)

Lasers

Scaling of energy characteristics of polycrystalline Fe$^{2+}$:ZnSe laser at room temperature

E. M. Gavrishchukab, V. B. Ikonnikova, S. Yu. Kazantsevc, I. G. Kononovc, S. A. Rodina, D. V. Savina, N. A. Timofeevaa, K. N. Firsovcd

a Institute of Chemistry of High-Purity Substances RAS, Nizhnii Novgorod
b Lobachevski State University of Nizhni Novgorod
c A.M. Prokhorov General Physics Institute Russian Academy of Sciences, Moscow
d Moscow Engineering Physics Institute (National Nuclear Research University)
References:
Abstract: The lasing characteristics of lasers based on diffusiondoped Fe$^{2+}$:ZnSe polycrystalline samples excited at room temperature by an electric-discharge HF laser are studied. A sample doped from two sides (working surfaces) emitted laser radiation with the energy $E=253$ mJ with the slope efficiency $\eta_d=33$ % and the efficiency with respect to the absorbed energy $\eta_{abs}\approx28$ % in the case of an elliptical pump spot of size $a\times b=6.8\times7.5$ mm. It is found that the possibility of increasing the lasing energy of the samples of these types by increasing the pump spot area (at a constant pump energy density) is limited by the appearance of parasitic generation typical for disk lasers. The first results are reported on the laser based on a polycrystalline sample made by a technology that allows one to form a zero dopant concentration on the surface and a maximum concentration inside the sample (i.e., to create a sample with internal doping). The possibilities of increasing the Fe$^{2+}$:ZnSe laser energy at room temperature by using multilayer samples fabricated by this doping method are discussed.
Keywords: Fe$^{2+}$:ZnSe laser, non-chain electric-discharge HF laser, optical pumping, diffusion doping, CVD method, barothermic treatment.
Received: 27.04.2015
Revised: 10.06.2015
English version:
Quantum Electronics, 2015, Volume 45, Issue 9, Pages 823–827
DOI: https://doi.org/10.1070/QE2015v045n09ABEH015845
Bibliographic databases:
Document Type: Article
PACS: 42.55.Rz, 42.55.Ks, 42.60.Jf, 42.60.Lh
Language: Russian
Citation: E. M. Gavrishchuk, V. B. Ikonnikov, S. Yu. Kazantsev, I. G. Kononov, S. A. Rodin, D. V. Savin, N. A. Timofeeva, K. N. Firsov, “Scaling of energy characteristics of polycrystalline Fe$^{2+}$:ZnSe laser at room temperature”, Kvantovaya Elektronika, 45:9 (2015), 823–827 [Quantum Electron., 45:9 (2015), 823–827]
Citation in format AMSBIB
\Bibitem{GavIkoKaz15}
\by E.~M.~Gavrishchuk, V.~B.~Ikonnikov, S.~Yu.~Kazantsev, I.~G.~Kononov, S.~A.~Rodin, D.~V.~Savin, N.~A.~Timofeeva, K.~N.~Firsov
\paper Scaling of energy characteristics of polycrystalline Fe$^{2+}$:ZnSe laser at room temperature
\jour Kvantovaya Elektronika
\yr 2015
\vol 45
\issue 9
\pages 823--827
\mathnet{http://mi.mathnet.ru/qe16243}
\elib{https://elibrary.ru/item.asp?id=24850457}
\transl
\jour Quantum Electron.
\yr 2015
\vol 45
\issue 9
\pages 823--827
\crossref{https://doi.org/10.1070/QE2015v045n09ABEH015845}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000362117500006}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84943242115}
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  • https://www.mathnet.ru/eng/qe/v45/i9/p823
  • This publication is cited in the following 35 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    References:37
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