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This article is cited in 6 scientific papers (total in 6 papers)
Lasers
Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure
N. A. Gamova, E. V. Zhdanovaa, M. M. Zvereva, D. V. Peregudova, V. B. Studenova, A. V. Mazalovb, V. A. Kureshovb, D. R. Sabitovb, A. A. Padalitsab, A. A. Marmalyukbc a Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
c National Engineering Physics Institute "MEPhI", Moscow
Abstract:
The parameters of pulsed blue-violet (λ ≈ 430 nm at T = 300 K) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was 9 keV and the minimum threshold electron beam current density was 8 A cm-2 at an electron energy of 18 keV.
Keywords:
electron-beam-pumped laser, quantum-well structure, quantum well.
Received: 09.02.2015 Revised: 27.03.2015
Citation:
N. A. Gamov, E. V. Zhdanova, M. M. Zverev, D. V. Peregudov, V. B. Studenov, A. V. Mazalov, V. A. Kureshov, D. R. Sabitov, A. A. Padalitsa, A. A. Marmalyuk, “Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure”, Kvantovaya Elektronika, 45:7 (2015), 601–603 [Quantum Electron., 45:7 (2015), 601–603]
Linking options:
https://www.mathnet.ru/eng/qe16210 https://www.mathnet.ru/eng/qe/v45/i7/p601
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Abstract page: | 324 | Full-text PDF : | 132 | References: | 29 | First page: | 32 |
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