S. I. Ashitkov, S. A. Romashevskii, P. S. Komarov, A. A. Burmistrov, V. V. Zhakhovskii, N. A. Inogamov, M. B. Agranat, “Formation of nanostructures under femtosecond laser ablation of metals”, Kvantovaya Elektronika, 45:6 (2015), 547–550 [Quantum Electron., 45:6 (2015), 547

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Kvantovaya Elektronika, 2015, Volume 45, Number 6, Pages 547–550 (Mi qe16194)

This article is cited in 26 scientific papers (total in 26 papers)

Superstrong light fields

Formation of nanostructures under femtosecond laser ablation of metals

S. I. Ashitkov^a, S. A. Romashevskii^a, P. S. Komarov^a, A. A. Burmistrov^a, V. V. Zhakhovskii^b, N. A. Inogamov^c, M. B. Agranat^a

^a Joint Institute for High Temperatures, Russian Academy of Sciences, Moscow
^b All-Russian Scientific Research Institute of Automatics, Moscow
^c L.D. Landau Institute for Theoretical Physics RAS

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Abstract: We present the results of studying the morphology of the modified surface of aluminium, nickel and tantalum after ablation of the surface layer by a femtosecond laser pulse. The sizes of characteristic elements of a cellular nanostructure are found to correlate with thermo-physical properties of the material and the intensity of laser radiation.

Keywords: femtosecond laser pulse, ablation, nanostructures.

Received: 29.01.2015
Revised: 10.02.2015

English version:
Quantum Electronics, 2015, Volume 45, Issue 6, Pages 547–550
DOI: https://doi.org/10.1070/QE2015v045n06ABEH015771

Bibliographic databases:

Document Type: Article

PACS: 79.20.Eb, 81.07.-b, 42.65.Re

Language: Russian

Citation: S. I. Ashitkov, S. A. Romashevskii, P. S. Komarov, A. A. Burmistrov, V. V. Zhakhovskii, N. A. Inogamov, M. B. Agranat, “Formation of nanostructures under femtosecond laser ablation of metals”, Kvantovaya Elektronika, 45:6 (2015), 547–550 [Quantum Electron., 45:6 (2015), 547–550]

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https://www.mathnet.ru/eng/qe16194

https://www.mathnet.ru/eng/qe/v45/i6/p547

This publication is cited in the following 26 articles:

Citing articles in Google Scholar: Russian citations, English citations
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