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This article is cited in 8 scientific papers (total in 8 papers)
Nanostructures
Bulk photoemission from metal films and nanoparticles
R. Sh. Ikhsanova, V. E. Babichevabc, I. E. Protsenkode, A. V. Uskovde, M. E. Guzhvafb
a Research Institute of Scientific Instruments, "Rosatom" State Atomic Energy Corporation, Lytkarino, Moscow region
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Technical University of Denmark
d P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
e Advanced Energy Technologies Ltd., Moscow
f Saint-Petersburg State Polytechnical University
Abstract:
Internal emission of photoelectrons from metal films and nanoparticles (nanowires and nanospheres) into a semiconductor matrix is studied theoretically by taking into account the jump of the effective electron mass at the metal – semiconductor interface and the cooling effect of hot electrons due to electron – electron collisions in the metal. The internal quantum efficiency of photoemission for the film and nanoparticles of two types (nanospheres and nanowires) is calculated. It is shown that the reduction of the effective mass of the electron during its transition from metal to semiconductor may lead to a significant (orders of magnitude and higher) decrease in the internal quantum efficiency of bulk photoemission.
Keywords:
bulk photoemission, plasmonic nanoantennas, internal quantum efficiency, effective mass of the electron, Schottky barrier.
Received: 26.05.2014
Revised: 04.08.2014
Citation:
R. Sh. Ikhsanov, V. E. Babicheva, I. E. Protsenko, A. V. Uskov, M. E. Guzhva, “Bulk photoemission from metal films and nanoparticles”, Kvantovaya Elektronika, 45:1 (2015), 50–58 [Quantum Electron., 45:1 (2015), 50–58]
Linking options:
https://www.mathnet.ru/eng/qe16097 https://www.mathnet.ru/eng/qe/v45/i1/p50
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