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This article is cited in 8 scientific papers (total in 8 papers)
Laser applications and other topics in quantum electronics
Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation
A. V. Gordienko, O. B. Mavritskii, A. N. Egorov, A. A. Pechenkin, D. V. Savchenkov National Engineering Physics Institute "MEPhI", Moscow
Abstract:
The statistics of the ionisation response amplitude measured at selected points and their surroundings within sensitive regions of integrated circuits (ICs) under focused femtosecond laser irradiation is obtained for samples chosen from large batches of two types of ICs. A correlation between these data and the results of full-chip scanning is found for each type. The criteria for express validation of IC single-event effect (SEE) hardness based on ionisation response measurements at selected points are discussed.
Keywords:
single event effects, femtosecond laser pulses, ionisation response.
Received: 07.04.2014 Revised: 04.06.2014
Citation:
A. V. Gordienko, O. B. Mavritskii, A. N. Egorov, A. A. Pechenkin, D. V. Savchenkov, “Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation”, Kvantovaya Elektronika, 44:12 (2014), 1173–1178 [Quantum Electron., 44:12 (2014), 1173–1178]
Linking options:
https://www.mathnet.ru/eng/qe16082 https://www.mathnet.ru/eng/qe/v44/i12/p1173
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