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This article is cited in 2 scientific papers (total in 2 papers)
Interaction of laser radiation with matter
Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition
V. M. Brendela, S. V. Garnova, T. F. Yagafarova, L. D. Iskhakovab, R. P. Ermakovb a A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
b Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
Abstract:
CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry to targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity.
Keywords:
pulsed laser deposition, thin film growth, ablation.
Received: 23.10.2013 Revised: 06.02.2014
Citation:
V. M. Brendel, S. V. Garnov, T. F. Yagafarov, L. D. Iskhakova, R. P. Ermakov, “Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition”, Kvantovaya Elektronika, 44:9 (2014), 841–844 [Quantum Electron., 44:9 (2014), 841–844]
Linking options:
https://www.mathnet.ru/eng/qe16027 https://www.mathnet.ru/eng/qe/v44/i9/p841
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Abstract page: | 218 | Full-text PDF : | 81 | References: | 35 | First page: | 14 |
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