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Kvantovaya Elektronika, 1999, Volume 29, Number 1, Pages 61–65 (Mi qe1599)  

Nonlinear optical phenomena

Characteristic features of the interaction of ultrashort resonant laser radiation pulses with thin semiconductor films

P. I. Khadzhi, L. V. Fedorov

Department of Physics and Mathematics, T. G. Shevchenko Pridnestrie State University, Tiraspol'
Abstract: The relationships governing nonlinear transient transmission and reflection of ultrashort resonant laser radiation pulses with rectangular and Gaussian profiles by a thin semiconductor film were investigated taking into account the exciton—photon interaction and the concentration enhancement of the dipole moment of the exciton transition. It is shown that the transmission of a Gaussian pulse is characterised by the formation of two subpulses with identical areas, which are separated in time and have different profiles.
Received: 12.03.1999
English version:
Quantum Electronics, 1999, Volume 29, Issue 10, Pages 899–903
DOI: https://doi.org/10.1070/QE1999v029n10ABEH001599
Bibliographic databases:
Document Type: Article
PACS: 78.20.-e, 42.50.Md, 42.65.Re
Language: Russian


Citation: P. I. Khadzhi, L. V. Fedorov, “Characteristic features of the interaction of ultrashort resonant laser radiation pulses with thin semiconductor films”, Kvantovaya Elektronika, 29:1 (1999), 61–65 [Quantum Electron., 29:10 (1999), 899–903]
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