Reading of optical information from a metal-insulator-semiconductor structure by an electron beam

An investigation was made of the mechanism of the appearance of an emf due to irradiation of a metal-insulator-semiconductor structure with an electron beam. The mechanism of this cathodo-emf was found to be similar to the photoemf mechanism. The charge states of the traps in the insulator could be determined by investigating this emf. The cathodo-emf could be used for reading the potential relief in array-type image detectors.