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This article is cited in 14 scientific papers (total in 14 papers)
Lasers
Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm
E. V. Andreevaa, S. N. Il'chenkoa, M. A. Laduginb, A. A. Lobintsova, A. A. Marmalyukc, M. V. Shramenkoa, S. D. Yakubovichd a Superlum Diodes Ltd., Moscow
b "Sigm Plyus" Ltd., Moscow
c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
d Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
Abstract:
A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented.
Keywords:
semiconductor optical amplifier, tunable and single-frequency lasers.
Received: 30.05.2013 Revised: 31.07.2013
Citation:
E. V. Andreeva, S. N. Il'chenko, M. A. Ladugin, A. A. Lobintsov, A. A. Marmalyuk, M. V. Shramenko, S. D. Yakubovich, “Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm”, Kvantovaya Elektronika, 43:11 (2013), 994–998 [Quantum Electron., 43:11 (2013), 994–998]
Linking options:
https://www.mathnet.ru/eng/qe15248 https://www.mathnet.ru/eng/qe/v43/i11/p994
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