Abstract:
It is shown that reabsorption of the luminescence radiation in the range of its overlapping with the absorption spectrum and the following reemission to a long-wavelength range may noticeably affect the process of stimulated Raman scattering (SRS) in polymethine dyes in multiple scattering media (MSM). This is related to the fact that SRS in such media occurs jointly with the random lasing (RL), which favors SRS and makes up with it a united nonlinear process. Reemission into the long-wavelength spectrum range amplified in MSM causes the RL spectrum to shift to longer wavelengths and initiates the long-wavelength band of RL, in which a main part of the lasing energy is concentrated. This weakens or completely stops the SRS if the band is beyond the range of possible spectral localisation of Stokes lines. This process depends on the efficiency of light scattering, dye concentration, temperature and pump intensity; hence, there exist optimal values of these parameters for obtaining SRS in MSM.
Keywords:
stimulated Raman scattering, random lasing, dyes, multiple scattering medium, vesicular film.
Citation:
V. P. Yashchuk, A. O. Komyshan, A. P. Smalyuk, O. A. Prigodiuk, A. A. Ishchenko, L. A. Olkhovyk, “Influence of reabsorption and reemission on stimulated Raman scattering of polymethine dyes in multiple scattering media”, Kvantovaya Elektronika, 43:12 (2013), 1127–1131 [Quantum Electron., 43:12 (2013), 1127–1131]
Linking options:
https://www.mathnet.ru/eng/qe15235
https://www.mathnet.ru/eng/qe/v43/i12/p1127
This publication is cited in the following 9 articles:
Vasil P. Yashchuk, O. O. Komyshan, S. E. Zelensky, E. A. Tikhonov, Low Temperature Physics, 51:2 (2025), 252
Yashchuk V.P. Sukhariev A.A. Smaliuk A.P., 2016 IEEE 7Th International Conference on Advanced Optoelectronics and Lasers (Caol), International Conference on Advanced Optoelectronics and Lasers, ed. Shulika O. Sukhoivanov I., IEEE, 2016, 233–234
V.P. Yashchuk, A.A. Sukhariev, A.P. Smaliuk, 2016 IEEE 7th International Conference on Advanced Optoelectronics and Lasers (CAOL), 2016, 233