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This article is cited in 6 scientific papers (total in 6 papers)
Lasers
Efficiency of GaInAs/GaAs quantum-well lasers upon inhomogeneous excitation of quantum wells
D. V. Ushakova, A. A. Afonenkoa, V. Ya. Aleshkinb a Belarusian State University, Minsk
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
A model for calculating the power characteristics of laser structures taking into account inhomogeneous excitation of quantum wells (QWs), recombination in the barrier regions, and nonlinear gain effects is developed. It is shown that, with increasing number of QWs, the output power of the Ga0.8In0.2As/GaAs/InGaP structures at first considerably increases and then slightly decreases. In a wide range of injection currents, the optimal number of QWs is 5 ± 1. The inhomogeneity of QW excitation increases with increasing injection current and decreases the laser power compared to homogeneous excitation.
Keywords:
GaInAs/GaAs laser, quantum well, inhomogeneous excitation, lasing efficiency.
Received: 29.03.2013 Revised: 17.07.2013
Citation:
D. V. Ushakov, A. A. Afonenko, V. Ya. Aleshkin, “Efficiency of GaInAs/GaAs quantum-well lasers upon inhomogeneous excitation of quantum wells”, Kvantovaya Elektronika, 43:11 (2013), 999–1002 [Quantum Electron., 43:11 (2013), 999–1002]
Linking options:
https://www.mathnet.ru/eng/qe15193 https://www.mathnet.ru/eng/qe/v43/i11/p999
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