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This article is cited in 23 scientific papers (total in 23 papers)
Semiconductor lasers. Physics and Technology
Influence of the axicon characteristics and beam propagation parameter $M^2$ on the formation of Bessel beams from semiconductor lasers
G. S. Sokolovskiia, V. V. Dyudeleva, S. N. Loseva, M. Butkusb, X. K. Sobolevaa, A. I. Soboleva, A. G. Deryagina, V. I. Kuchinskiia, V. Sibbetc, È. U. Rafailovb a Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
b Photonics & Nanoscience Group, School of Engineering, Physics and Mathematics, University of Dundee
c School of Physics and Astronomy, University of St. Andrews
Abstract:
We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter $M^2$. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high $M^2$ rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.
Keywords:
Bessel beams, quasi-Gaussian beams, axicon, beam propagation parameter, semiconductor laser.
Received: 27.02.2013
Citation:
G. S. Sokolovskii, V. V. Dyudelev, S. N. Losev, M. Butkus, X. K. Soboleva, A. I. Sobolev, A. G. Deryagin, V. I. Kuchinskii, V. Sibbet, È. U. Rafailov, “Influence of the axicon characteristics and beam propagation parameter $M^2$ on the formation of Bessel beams from semiconductor lasers”, Kvantovaya Elektronika, 43:5 (2013), 423–427 [Quantum Electron., 43:5 (2013), 423–427]
Linking options:
https://www.mathnet.ru/eng/qe15170 https://www.mathnet.ru/eng/qe/v43/i5/p423
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