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Kvantovaya Elektronika, 2013, Volume 43, Number 5, Pages 423–427 (Mi qe15170)  

This article is cited in 23 scientific papers (total in 23 papers)

Semiconductor lasers. Physics and Technology

Influence of the axicon characteristics and beam propagation parameter $M^2$ on the formation of Bessel beams from semiconductor lasers

G. S. Sokolovskiia, V. V. Dyudeleva, S. N. Loseva, M. Butkusb, X. K. Sobolevaa, A. I. Soboleva, A. G. Deryagina, V. I. Kuchinskiia, V. Sibbetc, È. U. Rafailovb

a Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
b Photonics & Nanoscience Group, School of Engineering, Physics and Mathematics, University of Dundee
c School of Physics and Astronomy, University of St. Andrews
References:
Abstract: We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter $M^2$. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high $M^2$ rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.
Keywords: Bessel beams, quasi-Gaussian beams, axicon, beam propagation parameter, semiconductor laser.
Received: 27.02.2013
English version:
Quantum Electronics, 2013, Volume 43, Issue 5, Pages 423–427
DOI: https://doi.org/10.1070/QE2013v043n05ABEH015170
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Jf
Language: Russian
Citation: G. S. Sokolovskii, V. V. Dyudelev, S. N. Losev, M. Butkus, X. K. Soboleva, A. I. Sobolev, A. G. Deryagin, V. I. Kuchinskii, V. Sibbet, È. U. Rafailov, “Influence of the axicon characteristics and beam propagation parameter $M^2$ on the formation of Bessel beams from semiconductor lasers”, Kvantovaya Elektronika, 43:5 (2013), 423–427 [Quantum Electron., 43:5 (2013), 423–427]
Citation in format AMSBIB
\Bibitem{SokDyuLos13}
\by G.~S.~Sokolovskii, V.~V.~Dyudelev, S.~N.~Losev, M.~Butkus, X.~K.~Soboleva, A.~I.~Sobolev, A.~G.~Deryagin, V.~I.~Kuchinskii, V.~Sibbet, \`E.~U.~Rafailov
\paper Influence of the axicon characteristics and beam propagation parameter $M^2$ on the formation of Bessel beams from semiconductor lasers
\jour Kvantovaya Elektronika
\yr 2013
\vol 43
\issue 5
\pages 423--427
\mathnet{http://mi.mathnet.ru/qe15170}
\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2013QuEle..43..423S}
\elib{https://elibrary.ru/item.asp?id=23452800}
\transl
\jour Quantum Electron.
\yr 2013
\vol 43
\issue 5
\pages 423--427
\crossref{https://doi.org/10.1070/QE2013v043n05ABEH015170}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000319865200006}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84878842770}
Linking options:
  • https://www.mathnet.ru/eng/qe15170
  • https://www.mathnet.ru/eng/qe/v43/i5/p423
  • This publication is cited in the following 23 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    Abstract page:368
    Full-text PDF :133
    References:41
    First page:13
     
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