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Kvantovaya Elektronika, 2013, Volume 43, Number 10, Pages 907–913 (Mi qe15139)  

Lasers

Effect of thermal processes on critical operation conditions of high-power laser diodes

V. V. Parashchuka, Doan Mien Vub

a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
b Institute of Materials Science, Vietnamese Academy of Science and Technology, Vietnam
References:
Abstract: Using numerical and analytical techniques in a threedimensional approximation, we have modelled the effect of spatial thermoelastic stress nonuniformity in a laser diode – heat sink system on the output characteristics of the device in different operation modes. We have studied the influence of the pulse duration, the geometry of the laser system and its thermophysical parameters on the critical pump current density, in particular for state-of-the-art heat conductive substrate materials. The proposed approach has been used to optimise the laser diode assembly process in terms of the quality of laser crystal positioning (bonding) on a heat sink.
Keywords: high-power laser diodes, laser diode – heat sink (contact layer) system, nonuniform thermal fields, thermoelastic stresses, critical operation conditions, diamond heat sinks, chip positioning.
Received: 31.01.2013
Revised: 12.03.2013
English version:
Quantum Electronics, 2013, Volume 43, Issue 10, Pages 907–913
DOI: https://doi.org/10.1070/QE2013v043n10ABEH015139
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Lh
Language: Russian


Citation: V. V. Parashchuk, Doan Mien Vu, “Effect of thermal processes on critical operation conditions of high-power laser diodes”, Kvantovaya Elektronika, 43:10 (2013), 907–913 [Quantum Electron., 43:10 (2013), 907–913]
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  • https://www.mathnet.ru/eng/qe15139
  • https://www.mathnet.ru/eng/qe/v43/i10/p907
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    Квантовая электроника Quantum Electronics
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