A. I. Zagumennyi, Yu. D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4 crystal and the operational characteristics of a microchip laser based on it”, Kvantovaya Elektronika, 27:1 (1999), 16–18 [Quantum Electron., 29:4 (1999), 298

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Kvantovaya Elektronika, 1999, Volume 27, Number 1, Pages 16–18 (Mi qe1513)

This article is cited in 19 scientific papers (total in 19 papers)

Lasers

Thermal conductivity of a Tm³⁺:GdVO₄ crystal and the operational characteristics of a microchip laser based on it

A. I. Zagumennyi^a, Yu. D. Zavartsev^a, P. A. Studenikin^a, V. I. Vlasov^a, I. A. Shcherbakov^a, C. P. Wyss^b, W. Luthy^b, H. P. Weber^b, P. A. Popov^c

^a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
^b Institute of Applied Physics, University of Bern, Switzerland
^c I. G. Petrovsky Bryansk State Pedagogical University

Full-text PDF (126 kB) Citations (19)

Abstract: The thermal conductivity of a Tm³⁺:GdVO₄ crystal was measured in the temperature range 50 — 300 K. At a temperature of 300 K, the thermal conductivity along the c axis amounted to 9.7 W m^-1 K^-1, which is higher than the thermal conductivity of a Cr:Tm:Ho :YAG crystal. A maximum output power of 1.4 W (λ=1.915 μm) was attained in a Tm³⁺:GdVO₄ microchip laser for a lasing threshold of 5.7 W and a differential efficiency of 9.2%. A GdVO₄ array was found to have a number of advantages compared with other media for the fabrication of diode-pumped lasers.

Received: 13.11.1998

English version:
Quantum Electronics, 1999, Volume 29, Issue 4, Pages 298–300
DOI: https://doi.org/10.1070/QE1999v029n04ABEH001513

Bibliographic databases:

Document Type: Article

PACS: 42.55.Rz, 42.55.Xi, 42.60.Jf, 66.70.+f

Language: Russian

Citation: A. I. Zagumennyi, Yu. D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm³⁺:GdVO₄ crystal and the operational characteristics of a microchip laser based on it”, Kvantovaya Elektronika, 27:1 (1999), 16–18 [Quantum Electron., 29:4 (1999), 298–300]

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https://www.mathnet.ru/eng/qe1513

https://www.mathnet.ru/eng/qe/v27/i1/p16

This publication is cited in the following 19 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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