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Kvantovaya Elektronika, 2013, Volume 43, Number 11, Pages 1009–1013 (Mi qe15127)  

Lasers

Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode

M. S. Aliasa, A. N. Al-Omarib, F. Maskuriya, F. Faiza, S. M. Mitania

a Advanced Physical Technologies Laboratory, Telekom Malaysia Research & Development, Lingkaran Teknokrat Timur, Malaysia
b Electronic Engineering Department, Hijjawi Faculty for Engineering Technology, Yarmouk University, Jordan
References:
Abstract: We report optimisation of optical properties of a strained GaInNAs/GaAs quantum-well laser, by taking into account the many-body effect theory and the bowing parameter. The theoretical transition energies and the GaInNAs bowing parameter are fitted into the photoluminescence spectrum of the GaInNAs quantum well, obtained in the experiment. The theoretical results for the photoluminescence spectrum and laser characteristics (light, current and voltage) exhibits a high degree of agreement with the experimental results.
Keywords: GaInNAs, edge emitting laser, laser diode.
Received: 22.01.2013
English version:
Quantum Electronics, 2013, Volume 43, Issue 11, Pages 1009–1013
DOI: https://doi.org/10.1070/QE2013v043n11ABEH015127
Bibliographic databases:
Document Type: Article
PACS: 42.55.Tv, 42.55.Px, 73.61.Ey
Language: Russian


Citation: M. S. Alias, A. N. Al-Omari, F. Maskuriy, F. Faiz, S. M. Mitani, “Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode”, Kvantovaya Elektronika, 43:11 (2013), 1009–1013 [Quantum Electron., 43:11 (2013), 1009–1013]
Linking options:
  • https://www.mathnet.ru/eng/qe15127
  • https://www.mathnet.ru/eng/qe/v43/i11/p1009
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    Квантовая электроника Quantum Electronics
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    First page:19
     
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