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This article is cited in 6 scientific papers (total in 6 papers)
Integrated optical waveguides
Analysis of light propagation for a crossing of thin silicon wires using vertical tunnelling coupling with a thick optical channel waveguide
A. V. Tsarev, E. A. Kolosovskii Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
Using silicon photonic wires in a silicon-on-insulator structure as an example, we examine the problem of crossings of thin, high-index-contrast channel waveguides. To ensure high optical wave transmission efficiency at as low a level of parasitic scattering as possible, we propose using a structure with vertical coupling between a thin tapered silicon waveguide and a thick polymer waveguide, separated by a thin buffer oxide layer. Numerical simulation is used to find conditions under which such a structure (3 × 90 mm in dimensions) ensures 98 % and 99 % transmission efficiency at ~1.55 mm in 35- and 26-nm spectral ranges, respectively, for direct propagation and 99.99 % transmission in the transverse direction. The optical element in question is proposed for use in optical microchips with multiple channel waveguide crossings.
Keywords:
integrated optics, optical waveguide, method of lines, finite-difference time-domain (FDTD) method, beam propagation method (BPM), nanophotonics.
Received: 15.01.2013 Revised: 14.05.2013
Citation:
A. V. Tsarev, E. A. Kolosovskii, “Analysis of light propagation for a crossing of thin silicon wires using vertical tunnelling coupling with a thick optical channel waveguide”, Kvantovaya Elektronika, 43:8 (2013), 744–750 [Quantum Electron., 43:8 (2013), 744–750]
Linking options:
https://www.mathnet.ru/eng/qe15089 https://www.mathnet.ru/eng/qe/v43/i8/p744
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Abstract page: | 247 | Full-text PDF : | 74 | References: | 30 | First page: | 8 |
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