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Kvantovaya Elektronika, 2013, Volume 43, Number 8, Pages 744–750 (Mi qe15089)  

This article is cited in 6 scientific papers (total in 6 papers)

Integrated optical waveguides

Analysis of light propagation for a crossing of thin silicon wires using vertical tunnelling coupling with a thick optical channel waveguide

A. V. Tsarev, E. A. Kolosovskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
References:
Abstract: Using silicon photonic wires in a silicon-on-insulator structure as an example, we examine the problem of crossings of thin, high-index-contrast channel waveguides. To ensure high optical wave transmission efficiency at as low a level of parasitic scattering as possible, we propose using a structure with vertical coupling between a thin tapered silicon waveguide and a thick polymer waveguide, separated by a thin buffer oxide layer. Numerical simulation is used to find conditions under which such a structure (3 × 90 mm in dimensions) ensures 98 % and 99 % transmission efficiency at ~1.55 mm in 35- and 26-nm spectral ranges, respectively, for direct propagation and 99.99 % transmission in the transverse direction. The optical element in question is proposed for use in optical microchips with multiple channel waveguide crossings.
Keywords: integrated optics, optical waveguide, method of lines, finite-difference time-domain (FDTD) method, beam propagation method (BPM), nanophotonics.
Received: 15.01.2013
Revised: 14.05.2013
English version:
Quantum Electronics, 2013, Volume 43, Issue 8, Pages 744–750
DOI: https://doi.org/10.1070/QE2013v043n08ABEH015089
Bibliographic databases:
Document Type: Article
PACS: 42.82.Bq, 42.82.Ds, 42.82.Et
Language: Russian


Citation: A. V. Tsarev, E. A. Kolosovskii, “Analysis of light propagation for a crossing of thin silicon wires using vertical tunnelling coupling with a thick optical channel waveguide”, Kvantovaya Elektronika, 43:8 (2013), 744–750 [Quantum Electron., 43:8 (2013), 744–750]
Linking options:
  • https://www.mathnet.ru/eng/qe15089
  • https://www.mathnet.ru/eng/qe/v43/i8/p744
  • This publication is cited in the following 6 articles:
    1. Quantum Electron., 47:1 (2017), 58–64  mathnet  crossref  isi  elib
    2. A. V. Tsarev, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, ed. A. Latyshev, A. Dvurechenskii, A. Aseev, Elsevier Science BV, 2017, 505–519  crossref  isi  scopus
    3. Tsarev A.V., Kolosovsky E.A., 2016 13Th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering (Apeie), Vol 1, International Conference on Actual Problems of Electronic Instrument Engineering, IEEE, 2016, 376–378  isi
    4. Liam O’Faolain, Andrei Tsarev, Opt. Lett, 39:12 (2014), 3627  crossref  isi  scopus
    5. Tsarev A.V., 2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE) (Novosibirsk, Russia), IEEE, 2014, 452–455  crossref  isi  scopus
    6. Andrei Tsarev, IEEE J. Select. Topics Quantum Electron., 20:4 (2014), 77  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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