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Kvantovaya Elektronika, 2013, Volume 43, Number 7, Pages 656–665 (Mi qe15013)  

This article is cited in 7 scientific papers (total in 7 papers)

Fiber optics

Spectral behaviour of bismuth centres in different steps of the FCVD process

A. S. Zlenko, V. M. Mashinsky, L. D. Iskhakova, R. P. Ermakov, S. L. Semenov, V. V. Koltashev

Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
References:
Abstract: The behaviour of bismuth ions in silica glass free of other dopants has been studied in different steps of the furnace chemical vapour deposition (FCVD) process. Porous layers annealed and consolidated in different atmospheres, a bismuth chloride solution in acetone for porous layer impregnation, the resultant glass preform and holey fibres drawn out under various conditions have been characterised by spectroscopic techniques and X-ray diffraction. Active bismuth centres present in the preform and luminescing in the visible and IR spectral regions persist during drawing under reducing conditions, whereas drawing under oxidising conditions eliminates such centres. Annealing under reducing conditions produces absorption bands of IR-emitting bismuth centres (IRBCs) in spectra of fibres drawn out under oxidising conditions and concurrently increases the background loss. Under the annealing conditions of this study (argon atmosphere, Tmax = 1100 °C, 30 min), the IRBC concentration reaches a maximum and then decreases, whereas the background loss increases monotonically.
Keywords: bismuth-related optical centres, porous layer, silica glass, fibre preform, bismuth-doped fibre, FCVD, acetone, bismuth chloride.
Received: 01.10.2012
Revised: 21.12.2012
English version:
Quantum Electronics, 2013, Volume 43, Issue 7, Pages 656–665
DOI: https://doi.org/10.1070/QE2013v043n07ABEH015013
Bibliographic databases:
Document Type: Article
PACS: 33.20.Kf, 42.55.Wd, 42.81.Bm, 78.60.Lc
Language: Russian


Citation: A. S. Zlenko, V. M. Mashinsky, L. D. Iskhakova, R. P. Ermakov, S. L. Semenov, V. V. Koltashev, “Spectral behaviour of bismuth centres in different steps of the FCVD process”, Kvantovaya Elektronika, 43:7 (2013), 656–665 [Quantum Electron., 43:7 (2013), 656–665]
Linking options:
  • https://www.mathnet.ru/eng/qe15013
  • https://www.mathnet.ru/eng/qe/v43/i7/p656
  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    References:38
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