S. N. Il'chenko, M. A. Ladugin, A. A. Marmalyuk, S. D. Yakubovich, “Nearest-IR superluminescent diodes with a 100-nm spectral width”, Kvantovaya Elektronika, 42:11 (2012), 961–963 [Quantum Electron., 42:11 (2012), 961

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Kvantovaya Elektronika, 2012, Volume 42, Number 11, Pages 961–963 (Mi qe14981)

This article is cited in 3 scientific papers (total in 3 papers)

Letters

Nearest-IR superluminescent diodes with a 100-nm spectral width

S. N. Il'chenko^a, M. A. Ladugin^b, A. A. Marmalyuk^c, S. D. Yakubovich^d

^a Superlum Diodes Ltd., Moscow
^b "Sigm Plyus" Ltd., Moscow
^c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^d Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)

Full-text PDF (301 kB) Citations (3)

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Abstract: This paper presents an experimental study of quantum well superluminescent diodes with an extremely thin (InGa)As active layer. Under cw injection, the output power of such diodes is several milliwatts, with a centre wavelength of 830 nm and emission bandwidth of about 100 nm.

Keywords: superluminescent diode, optical coherence tomography.

Received: 19.09.2012

English version:
Quantum Electronics, 2012, Volume 42, Issue 11, Pages 961–963
DOI: https://doi.org/10.1070/QE2012v042n11ABEH014981

Bibliographic databases:

Document Type: Article

PACS: 42.55.Px, 78.66.-w, 42.60.Lh

Language: Russian

Citation: S. N. Il'chenko, M. A. Ladugin, A. A. Marmalyuk, S. D. Yakubovich, “Nearest-IR superluminescent diodes with a 100-nm spectral width”, Kvantovaya Elektronika, 42:11 (2012), 961–963 [Quantum Electron., 42:11 (2012), 961–963]

Linking options:

https://www.mathnet.ru/eng/qe14981

https://www.mathnet.ru/eng/qe/v42/i11/p961

This publication is cited in the following 3 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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Abstract page:	252
Full-text PDF :	109
References:	36
First page:	4

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