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Kvantovaya Elektronika, 2012, Volume 42, Number 11, Pages 961–963 (Mi qe14981)  

This article is cited in 3 scientific papers (total in 3 papers)

Letters

Nearest-IR superluminescent diodes with a 100-nm spectral width

S. N. Il'chenkoa, M. A. Laduginb, A. A. Marmalyukc, S. D. Yakubovichd

a Superlum Diodes Ltd., Moscow
b "Sigm Plyus" Ltd., Moscow
c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
d Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
Full-text PDF (301 kB) Citations (3)
References:
Abstract: This paper presents an experimental study of quantum well superluminescent diodes with an extremely thin (InGa)As active layer. Under cw injection, the output power of such diodes is several milliwatts, with a centre wavelength of 830 nm and emission bandwidth of about 100 nm.
Keywords: superluminescent diode, optical coherence tomography.
Received: 19.09.2012
English version:
Quantum Electronics, 2012, Volume 42, Issue 11, Pages 961–963
DOI: https://doi.org/10.1070/QE2012v042n11ABEH014981
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 78.66.-w, 42.60.Lh
Language: Russian


Citation: S. N. Il'chenko, M. A. Ladugin, A. A. Marmalyuk, S. D. Yakubovich, “Nearest-IR superluminescent diodes with a 100-nm spectral width”, Kvantovaya Elektronika, 42:11 (2012), 961–963 [Quantum Electron., 42:11 (2012), 961–963]
Linking options:
  • https://www.mathnet.ru/eng/qe14981
  • https://www.mathnet.ru/eng/qe/v42/i11/p961
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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    Abstract page:251
    Full-text PDF :109
    References:36
    First page:4
     
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