Abstract:
This paper presents an experimental study of quantum well superluminescent diodes with an extremely thin (InGa)As active layer. Under cw injection, the output power of such diodes is several milliwatts, with a centre wavelength of 830 nm and emission bandwidth of about 100 nm.
Citation:
S. N. Il'chenko, M. A. Ladugin, A. A. Marmalyuk, S. D. Yakubovich, “Nearest-IR superluminescent diodes with a 100-nm spectral width”, Kvantovaya Elektronika, 42:11 (2012), 961–963 [Quantum Electron., 42:11 (2012), 961–963]
Linking options:
https://www.mathnet.ru/eng/qe14981
https://www.mathnet.ru/eng/qe/v42/i11/p961
This publication is cited in the following 3 articles: