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Kvantovaya Elektronika, 2012, Volume 42, Number 8, Pages 745–746 (Mi qe14906)  
This article is cited in 3 scientific papers (total in 3 papers)

Laser applications and other topics in quantum electronics

Effect of gamma irradiation on emission characteristics of laser heterostructures

B. I. Makhsudov

Tajik National University, Dushanbe
Full-text PDF (356 kB) Citations (3)
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Abstract: Changes in the threshold current and slope efficiency are studied under conditions of gamma-ray irradiation by injection InGaAsP/InP lasers emitting at 1.3 mm (irradiation dose is ~1014 — 1017 photon cm-2). We observed an improved performance at low values of the quantum flux density and degradation at doses greater than 1014 photon cm-2.
Keywords: injection laser, threshold current, slope efficiency, irradiation dose, gamma rays.
Received: 28.05.2012
Revised: 18.06.2012
English version:
Quantum Electronics, 2012, Volume 42, Issue 8, Pages 745–746
DOI: https://doi.org/10.1070/QE2012v042n08ABEH014906
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Lh, 61.80.Ed
Language: Russian


Citation: B. I. Makhsudov, “Effect of gamma irradiation on emission characteristics of laser heterostructures”, Kvantovaya Elektronika, 42:8 (2012), 745–746 [Quantum Electron., 42:8 (2012), 745–746]
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  • https://www.mathnet.ru/eng/qe14906
  • https://www.mathnet.ru/eng/qe/v42/i8/p745
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Квантовая электроника Quantum Electronics
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    Full-text PDF :70
    References:20
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