Abstract:
The visible and near-IR absorption and luminescence bands of bismuth-doped silica and germanosilicate fibres have been measured for the first time as a function of temperature. The temperature-dependent IR luminescence lifetime of a bismuth-related active centre associated with silicon in the germanosilicate fibre has been determined. The Bi3+ profile across the silica fibre preform is shown to differ markedly from the distribution of IR-emitting bismuth centres associated with silicon. The present results strongly suggest that the IR-emitting bismuth centre comprises a lowvalence bismuth ion and an oxygen-deficient glass network defect.
Keywords:
bismuth, bismuth-doped optical fibre, temperature dependence of optical absorption.
Citation:
D. A. Dvoretskii, I. A. Bufetov, V. V. Vel'miskin, A. S. Zlenko, V. F. Khopin, S. L. Semenov, A. N. Gur'yanov, L. K. Denisov, E. M. Dianov, “Optical properties of bismuth-doped silica fibres in the temperature range 300 — 1500 K”, Kvantovaya Elektronika, 42:9 (2012), 762–769 [Quantum Electron., 42:9 (2012), 762–769]
Linking options:
https://www.mathnet.ru/eng/qe14894
https://www.mathnet.ru/eng/qe/v42/i9/p762
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